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| Datasheet File OCR Text: |
| geometry process details principal device types cmpsh1-4l gross die per 5 inch wafer 10,900 process CPD85V schottky rectifier 1 amp schottky barrier rectifier chip process epitaxial planar die size 39.4 x 39.4 mils die thickness 7.1 mils anode bonding pad area 35 x 35 mils top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r1 (22-march 2010)
process CPD85V typical electrical characteristics www.centralsemi.com r1 (22-march 2010) |
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